Navitas has launched a portfolio of third-generation automotive-qualified SiC MOSFETs in D2PAL-7L and TOLL surface-mount packages. Leveraging the corporate’s trench-assisted planar know-how, the Gen-3 Quick SiC gadgets allow high-speed, cool-running operation for EV charging, traction, and DC/DC conversion.
In accordance with Navitas, the Gen-3 Quick MOSFETs obtain as much as 25°C decrease case temperatures in comparison with standard gadgets, leading to an working life that’s as much as 3 times longer than different SiC merchandise. The brand new 650-V MOSFETs, with RDS(ON) rankings starting from 20 mΩ to 55 mΩ, are designed for 400-V EV battery architectures. The 1200-V Gen-3 Quick MOSFETs, providing RDS(ON) values from 18 mΩ to 135 mΩ, are optimized for 800-V techniques.
Each the 650-V and 1200-V ranges are AEC-Q101 certified within the standard D2PAK-7L (TO-263-7) package deal. For 400-V EVs, the 650 V-rated TOLL package deal provides a number of benefits: a 9% discount in junction-to-case thermal resistance, a 30% smaller PCB footprint, 50% decrease peak, and 60% smaller total measurement in comparison with the D2PAK-7L. These enhancements allow excessive energy density and quick switching with minimal package deal inductance of simply 2 nH.
The automotive 650-V and 1200-V G3 Quick SiC MOSFETs at the moment are obtainable for buy. For extra info, contact information@navitassemi.com.
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