Because the downscaling of standard dynamic random-access reminiscence (DRAM) has reached its limits, 3D DRAM has been proposed as a next-generation DRAM cell structure. Nonetheless, incorporating silicon into 3D DRAM expertise faces numerous challenges in securing cost-effective excessive cell transistor efficiency. Subsequently, many researchers are exploring the appliance of next-generation semiconductor supplies, similar to transition oxide semiconductors (OSs) and steel dichalcogenides (TMDs), to deal with these challenges and to appreciate 3D DRAM. This research offers an outline of the proposed buildings for 3D DRAM, compares the traits of OSs and TMDs, and discusses the feasibility of using the OSs and TMDs because the channel materials for 3D DRAM. Moreover, we overview current progress in 3D DRAM utilizing the OSs, discussing their potential to beat challenges in silicon-based approaches.
