The TSHF5211, an 890-nm infrared emitting diode from Vishay, delivers a typical radiant depth of 235 mW/sr at a drive present of 100 mA. In accordance with the producer, this represents a 50% enhance over previous-generation units.
Based mostly on a floor emitter chip, the TSHF5211 affords a temperature coefficient of VF of -1.0 mV/Okay. It additionally supplies a slim ±10° half angle of depth and switching instances of 15 ns. These options make the high-intensity emitter well-suited for smoke detectors and industrial sensors, because it permits good spectral matching with silicon photodetectors in these purposes.
The TSHF5211 IR emitting diode is housed in a transparent, untinted leaded plastic bundle. Samples and manufacturing portions can be found now, with lead instances of 20 weeks for big orders.
Discover extra datasheets on merchandise like this one at Datasheets.com, searchable by class, half #, description, producer, and extra.
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