Infineon has launched 300-mm energy GaN wafer expertise inside a scalable, high-volume manufacturing surroundings. The corporate notes that 300-mm wafers supply vital technological and effectivity benefits over 200-mm wafers, producing 2.3 occasions extra chips per wafer as a result of bigger diameter.
Infineon manufactured 300-mm GaN wafers on an built-in pilot line in its present 300-mm silicon manufacturing facility in Villach, Austria. The corporate is drawing on its experience in 300-mm silicon and 200-mm GaN manufacturing and plans to scale GaN capability in accordance with market demand.
A key benefit of 300-mm GaN expertise is its compatibility with present 300-mm silicon manufacturing gear, because the manufacturing processes for gallium nitride and silicon are fairly comparable. As soon as totally scaled, 300-mm GaN manufacturing is anticipated to realize value parity with silicon on the RDS(on) degree, enabling comparable prices between Si and GaN merchandise.
Infineon will current its 300-mm GaN wafers on the electronica commerce present in November 2024 in Munich, Germany.
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