Magnachip Semiconductor has developed a 1200-V, 75-A IGBT for photo voltaic inverters, housed in a TO-247PLUS bundle. The MBQA75T120RFS IGBT expands the corporate’s portfolio, which features a 1200-V, 40-A IGBT and two 650-V IGBTs at 40 A and 75 A, all optimized for the photo voltaic vitality market. This portfolio additionally presents 4 MXT medium-voltage MOSFETs designed for photo voltaic purposes.
The most recent IGBT machine’s TO-247PLUS bundle options an expanded warmth spreader, providing higher warmth dissipation than the usual TO-247. Moreover, the MBQA75T120RFS improves energy effectivity by decreasing conduction losses by over 14% in comparison with the earlier era. This enhancement ensures steady operation even below overload situations, thereby boosting system reliability.
The MBQA75T120RFS IGBT integrates a fast-recovery anti-parallel diode that reduces switching losses by eradicating residual present. It additionally ensures a most working junction temperature of +175°C.
A datasheet for the MBQA75T120RFS IGBT was not accessible on the time of this announcement. The corporate plans to start out mass manufacturing in October 2024.
Discover extra datasheets on merchandise like this one at Datasheets.com, searchable by class, half #, description, producer, and extra.
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