Just lately, tellurium (Te) has been proposed as a promising p-type materials; nevertheless, even the state-of-the-art outcomes couldn’t overcome the important roadblocks for its sensible functions, equivalent to massive I–V hysteresis and excessive off-state leakage present. We developed a novel Te atomic layer deposition (ALD) course of mixed with a TeOx seed layer and Al2O3 passivation to detour the constraints of p-type Te semiconducting supplies. Additionally, we’ve recognized the origins of excessive hysteresis and off present utilizing the 77 Ok operation research and passivation course of optimization. In consequence, a p-type Te field-effect transistor displays lower than 23 mV hysteresis and a excessive field-effect mobility of 33 cm2 V−1 s−1 after correct channel thickness modulation and passivation. Additionally, an ultralow off-current of roughly 1 × 10−14 A, excessive on/off ratios within the order of 108, and a steep slope subthreshold swing of 79 mV dec−1 may very well be achieved at 77 Ok. These enhancements strongly point out that the beforehand reported excessive off-state present was originated from interfacial defects fashioned on the metallic–Te contact interface. Though additional research regarding this interface are nonetheless essential, the findings herein show that the foremost obstacles hindering using Te for ultrathin p-channel system functions will be eradicated by correct course of optimization.
